Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

Journal

Applied Physics Letters

Journal Volume

51

Journal Issue

20

Pages

1634-1636

Date Issued

1987

Author(s)

Liu, C.-W.

Chen, S.-L.

Lay, J.-P.

Lee, S.-C.

DOI

10.1063/1.98579

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500427

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-11744316186&doi=10.1063%2f1.98579&partnerID=40&md5=beb82bd15db08ec541dee41cb21ce55c

Type

journal article