Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications
Journal
IEEE Transactions on Electron Devices
Journal Volume
48
Journal Issue
12
Pages
2906-2910
Date Issued
2001
Author(s)
Abstract
The quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P (0/spl les//spl times//spl les/1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P materials and concluded that the best composition for improving the device performance is by substituting 30% (x=0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (/spl phi/B) of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P layers were 0.85/spl sim/1.00 eV. We successfully realized the (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent dc, microwave, and power characteristics.
Type
journal article