Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications
Journal
IEEE Transactions on Electron Devices
Journal Volume
48
Journal Issue
12
Pages
2906-2910
Date Issued
2001
Author(s)
Type
journal article