https://scholars.lib.ntu.edu.tw/handle/123456789/500433| Title: | Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications | Authors: | Yang, S.-C. Chiu, H.-C. Chan, Y.-J. Lin, H.-H. Kuo, J.-M. HAO-HSIUNG LIN |
Issue Date: | 2001 | Journal Volume: | 48 | Journal Issue: | 12 | Start page/Pages: | 2906-2910 | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500433 | DOI: | 10.1109/16.974726 |
| Appears in Collections: | 電機工程學系 |
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