Structure of GaAsN alloy within miscibility gap

Journal

2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Date Issued

2016

Author(s)

Wu, H.-M.

Lin, K.-I.

DOI

10.1109/ISNE.2016.7543310

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500451

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84985916056&doi=10.1109%2fISNE.2016.7543310&partnerID=40&md5=3870bf312ab7d82bedd5c763ec57a116

SDGs

[SDGs]SDG7

Type

conference paper