Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy

Journal

2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Date Issued

2016

Author(s)

Yang, C.-W.

Chen, W.-C.

DOI

10.1109/ISNE.2016.7543314

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500453

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84985930314&doi=10.1109%2fISNE.2016.7543314&partnerID=40&md5=380513f2c3c91b784bc13e10fd929848

Type

conference paper