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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy
Details
Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy
Journal
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Journal Volume
34
Journal Issue
3
Date Issued
2016
Author(s)
Xin, B.
Zhang, Y.-M.
Wu, H.-M.
Feng, Z.C.
Lin, H.-H.
Jia, R.-X.
HAO-HSIUNG LIN
DOI
10.1116/1.4947601
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500456
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84969697691&doi=10.1116%2f1.4947601&partnerID=40&md5=9a604f0b1bbbcd67b476a3d711d7b370
Type
journal article