Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level
Journal
ECS Journal of Solid State Science and Technology
Journal Volume
6
Journal Issue
10
Pages
Q143-Q147
Date Issued
2017
Author(s)
Hou, W.-T.
Abstract
The current coupling effect in concentric circle MIS(p) structure was investigated. It is found that the saturation current of the central device could be affected by the distance between two electrodes (S) and the voltage bias (VG) of the nearby device. While the electrode separation and VG change, minority carrier distribution at the fringe of the MIS tunnel diode also changes causing the variation in the saturation current of the central device. In addition, it is also found that by well-controlling VG, the light to dark current ratio Ilight/Idark of the central device could be effectively enhanced. In this study, two intensities of illumination on MIS(p) tunnel diodes were displayed. It is found that the maxima of current ratio Ilight/Idark took place at different values of VG for different intensities of illumination. Coupling effect plays an important role in this phenomenon.
SDGs
Type
journal article