The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing
Journal
Scientific Reports
Journal Volume
7
Journal Issue
1
Pages
1-9
Date Issued
2017
Author(s)
Lee, F.-Y.
Wu, Z.-Z.
Kao, L.-C.
Chang, F.-M.
Chen, S.-W.
Jangjian, S.-K.
Cheng, H.-Y.
Chen, W.-L.
Lo, K.Y.
Publisher
Nature Publishing Group
Type
journal article