Bias-dependent carrier and phonon dynamics in semiconductor-metal heterointerfaces
Journal
Journal of Applied Physics
Journal Volume
96
Journal Issue
1
Pages
928-930
Date Issued
2004
Author(s)
Abstract
The ultrafast carrier and phonon dynamics in the heterointerfaces of semiconductor nanostructures by using coherent phonons were investigated. The coherent longitudinal optical (LO) phonons in semiconductor-metal heterointerfaces were generated through an ultrafast depletion field screening process. It was found that photoexcited electrons ballistically transported from the metal layer into the semiconductor region caused field screening process. It was stated that the forward-bias-driven direct current influenced the transient carrier and phonon dynamics in semiconductor-metal interfaces.
Publisher
American Institute of Physics
Type
journal article