https://scholars.lib.ntu.edu.tw/handle/123456789/502095
Title: | Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | Authors: | Liu, C.W. Venkataraman, V. CHEE-WEE LIU |
Issue Date: | 1997 | Journal Volume: | 49 | Journal Issue: | 1 | Start page/Pages: | 29-32 | Source: | Materials Chemistry and Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/502095 | DOI: | 10.1016/S0254-0584(97)80123-X |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.