Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate
Journal
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Pages
16-17
Date Issued
2003
Author(s)
Abstract
The SiGe HBTs On SOI substrates have a higher Early voltage, maximum oscillation frequency, and breakdown voltage. Buried oxide (BOX) thickness effect and lateral distance between collector and reach-through region of SiGe HBT on SOI substrates are investigated. A SiGe HBTs on SOI substrates with larger buried oxide thickness can achieve a higher BV/sub CEO/ and f/sub max/ with a comparable f/sub T/ and V/sub A/. Optimal design of the BOX thickness and L/sub co1/ for SiGe HBTs on SOI has been studied.
Type
conference paper