The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing
Journal
IEEE Electron Device Letters
Journal Volume
36
Journal Issue
11
Pages
1114-1117
Date Issued
2015
Author(s)
Abstract
The phosphorus incorporation by chemical vapor deposition and activation by laser annealing reaches the electron concentration of ∼ 3 × 1020cm-3. The pulsed laser not only activates the phosphorus but also produces the biaxial tensile strain of 0.35%. With the nickel germanide contact, the specific contact resistivity reaches as low as 1.5 × 10-8 Ω-cm2 by greatly reducing the tunneling distance. Due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface. The misfit dislocations at the Ge/Si interface lead to the ideality factor of 1.6 for the Ge/Si hetero-junction diode with ON/OFF ratio of ∼ 1 × 105.
Type
journal article