The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing
Journal
IEEE Electron Device Letters
Journal Volume
36
Journal Issue
11
Pages
1114-1117
Date Issued
2015
Author(s)
Type
journal article