https://scholars.lib.ntu.edu.tw/handle/123456789/502120| Title: | The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing | Authors: | Huang, S.-H. Lu, F.-L. Huang, W.-L. Huang, C.-H. Liu, C.W. CHEE-WEE LIU |
Issue Date: | 2015 | Journal Volume: | 36 | Journal Issue: | 11 | Start page/Pages: | 1114-1117 | Source: | IEEE Electron Device Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/502120 | DOI: | 10.1109/LED.2015.2478916 |
| Appears in Collections: | 電機工程學系 |
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