High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET
Journal
2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002
Pages
145-148
Date Issued
2002
Author(s)
Abstract
A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer, and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si/sub 1-x/Ge/sub x/, strained Si/sub 1-x/Ge/sub x/ :C, Si/sub 1-y/C/sub y/, and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHV/CVD system, including HBTs, heterojunction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 /spl mu/m responsivity, and strained SiGe MOSFET.
SDGs
Type
conference paper