Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption
Details
3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption
Journal
Materials Science Forum
Journal Volume
740-742
Pages
573-576
Date Issued
2013
Author(s)
Zheng, W.
Feng, Z.C.
Zheng, R.S.
Jang, L.-Y.
CHEE-WEE LIU
DOI
10.4028/www.scientific.net/MSF.740-742.573
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/502134
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874069881&doi=10.4028%2fwww.scientific.net%2fMSF.740-742.573&partnerID=40&md5=643531cb141d6c132246e7b45c0faa36
Type
conference paper