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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Thermal modeling and device oise properties of three-dimensional-SOI technology
Details
Thermal modeling and device oise properties of three-dimensional-SOI technology
Journal
IEEE Transactions on Electron Devices
Journal Volume
56
Journal Issue
4
Pages
656-664
Date Issued
2009
Author(s)
Chen, T.W.
Chun, J.-H.
Lu, Y.-C.
Navid, R.
Wang, W.
Chen, C.-L.
Dutton, R.W.
YI-CHANG LU
DOI
10.1109/TED.2009.2014188
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/502245
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-65449176025&doi=10.1109%2fTED.2009.2014188&partnerID=40&md5=eb0eba23f5f121b07ad8dd4f268c5bf0
Type
journal article