Multiphonon Raman scattering in GaN nanowires
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
21
Pages
213104-1 - 213104-3
Date Issued
2007
Author(s)
Dhara, S.
Chandra, S.
Mangamma, G.
Kalavathi, S.
Shankar, P.
Nair, K.G.M.
Tyagi, A.K.
Hsu, C.W.
Kuo, C.C.
Chen, K.H.
Sriram, K.K.
Abstract
UV Raman scattering studies show longitudinal optical (LO) mode up to fourth order in wurtzite GaN nanowire system. Fröhlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ∼3nm.
SDGs
Publisher
American Institute of Physics
Type
journal article