Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature
Journal
Applied Physics Letters
Journal Volume
88
Journal Issue
24
Pages
241904-1 - 241904-3
Date Issued
2006
Author(s)
Dhara, S.
Magudapathy, P.
Kesavamoorthy, R.
Kalavathi, S.
Sastry, V.S.
Nair, K.G.M.
Hsu, G.M.
Chen, K.H.
Santhakumar, K.
Soga, T.
Abstract
The InN phase is grown in crystalline InP(100) substrates by 50keV N+ implantation at an elevated temperature of 400°C followed by annealing at 525°C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ∼1.06eV at temperatures ⩽150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
Publisher
American Institute of Physics
Type
journal article