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Center for Condensed Matter Sciences / 凝態科學研究中心
Electrical transport properties of single GaN and InN nanowires
Details
Electrical transport properties of single GaN and InN nanowires
Journal
Journal of Electronic Materials
Journal Volume
35
Journal Issue
4
Pages
738-743
Date Issued
2006
Author(s)
Chang, C.-Y.
Chi, G.-C.
Wang, W.-M.
Chen, L.-C.
Chen, K.-H.
Ren, F.
Pearton, S.J.
DOI
10.1007/s11664-006-0131-z
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/503463
Publisher
Springer Nature
Type
journal article