Correlation of Electrical, Thermal and Structural Properties of Microcrystalline Silicon Thin Films
Journal
Japanese Journal of Applied Physics
Journal Volume
41
Pages
L 229-L 232
Date Issued
2002
Author(s)
Abstract
Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σD) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (Fc) of the network. For the amorphous silicon network, α is ∼ 0.2 cm2·s1 and has a very low σD of ∼ 10-8S·cm-1. When the crystalline volume fraction (Fc) exceeds a certain percolation threshold, both α and σD increase abruptly. Undoped μc-Si:H films having Fc ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm2·s-1 and a very high σD of ∼ 10-3 S·cm-1.
SDGs
Publisher
The Japan Society of Applied Physics
Type
journal article