Doping and Electrical Properties of Amorphous Silicon Carbon Nitride Films
Journal
Diamond and Related Materials
Journal Volume
12
Journal Issue
3-7
Pages
1213-1219
Date Issued
2003
Author(s)
Abstract
Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiCxNy) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiCxNy thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10-6-10-8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type. © 2002 Elsevier Science B.V. All rights reserved.
SDGs
Publisher
Elsevier B.V.
Type
journal article