Transport Properties of InN Nanowires
Journal
Applied Physics Letters
Journal Volume
87
Journal Issue
9
Pages
093112-1 - 093112-3
Date Issued
2005
Author(s)
Abstract
The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n -type InN nanowires with diameter >100 nm was measured by the transmission line method and the value was on the order of 4× 10-4 Ω cm. The specific contact resistivity for unalloyed PdTiPtAu ohmic contacts was near 1.09× 10-7 Ω cm2. The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN. © 2005 American Institute of Physics.
Publisher
American Institute of Physics
Type
journal article