Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation
Journal
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Pages
422-425
Date Issued
2016
Author(s)
Abstract
Enhancement-mode AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with ultrathin barrier are demonstrated in this paper. By using the very slow recessed etching, 4-nm-thick AlGaN barrier is achieved with 3 nm Al 2 O 3 insulating layer. We also implement the diluted KOH to eliminate the surface damages during the dry etching process. The device with ultrathin barrier (4 nm AlGaN and 3 nm Al 2 O 3 ) is characterized with high saturation current excessed 400 mA/mm with low subthreshold swing and + 0.12 V threshold voltage.
Type
conference paper