Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
Journal
Ieee Electron Device Letters
Journal Volume
40
Journal Issue
9
Pages
1396-1398
Date Issued
2019
Author(s)
Michalczewski, Krystian
Martyniuk, Piotr
Kubiszyn, Lukasz
Wu, Chao-Hsin
Wu, Yuh-Renn
Jurenczyk, Jarek
Rogalski, Antoni
Piotrowski, Jozef
Abstract
In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (λ c ) ~ 15 μm for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D*) ~ 10 9 Jones (λ c ~ 15 μm). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with λ c ~ 15 μm where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.
SDGs
Type
journal article