Effects of thermal annealing on quantum-dot-like structure of medium indium-content InGaN/GaN multiquantum wells
Journal
Journal of Materials Science: Materials in Electronics
Journal Volume
14
Journal Issue
1
Pages
49-53
Date Issued
2003
Author(s)
Abstract
In-rich quantum-dot-like structures in In0.19Ga0.81N multiquantum well (MQWs) were investigated by means of high-resolution transmission electron microscopy (HRTEM) and energy-filtered (EF) TEM. It was found that thermal annealing at 900 °C led to a quasi-regular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950°C. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. A blue shift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed. © 2003 Kluwer Academic Publishers.
SDGs
Type
journal article