Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications
Journal
IEEE Electron Device Letters
Journal Volume
41
Pages
473-476
Date Issued
2020
Author(s)
Abstract
This work demonstrates the systematic methodology to optimize the negative capacitance (NC) n-type double gate (DG) junctionless (JL) device for low power (LP) and high-density (HD) applications. Results show that the positive charge density in the channel region of NCJL device induces negative internal gate voltage (V int ) at zero gate bias (V gs = 0 V), which helps to deplete the channel and significantly reduces the off-current (I off ) compared to JL device. Conventional JL device requires a very high gate work function (φm ~ 5 eV) to achieve volume depletion. However, NCJL device can lower φm to mid-gap values while ensuring the full depletion in the channel and improving the on-current (Ion). NCJL device with mid-gap φm exhibits higher Ion and lower I off compared to the performance target specified by International Roadmap for Devices and Systems (IRDS) for LP and HD applications.
Type
journal article