Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
Journal
IEEE Transactions on Electron Devices
Journal Volume
63
Journal Issue
2
Pages
625-630
Date Issued
2016
Author(s)
Abstract
For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. © 2015 IEEE.
Subjects
2-D materials; Bilayer; Monolayer; SRAM cell; Transition metal dichalcogenide (TMD)
Other Subjects
Electric current regulators; Monolayers; Static random access storage; 6T-SRAM; Bi-layer; Channel length; Low-power SRAM; SRAM applications; Transition metal dichalcogenides; Transition metals
Type
journal article