https://scholars.lib.ntu.edu.tw/handle/123456789/516588
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | C.-H. Yu | en_US |
dc.contributor.author | M.-L. Fan | en_US |
dc.contributor.author | K.-C. Yu | en_US |
dc.contributor.author | Pin Su | en_US |
dc.contributor.author | C.-T. Chuang | en_US |
dc.contributor.author | VITA PI-HO HU | en_US |
dc.creator | C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu | - |
dc.date.accessioned | 2020-10-07T01:23:13Z | - |
dc.date.available | 2020-10-07T01:23:13Z | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 00189383 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/516588 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958125898&doi=10.1109%2fTED.2015.2505064&partnerID=40&md5=efd41d4c1936c5f17e20eef9426cdaba | - |
dc.description.abstract | For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. © 2015 IEEE. | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | 2-D materials; Bilayer; Monolayer; SRAM cell; Transition metal dichalcogenide (TMD) | - |
dc.subject.other | Electric current regulators; Monolayers; Static random access storage; 6T-SRAM; Bi-layer; Channel length; Low-power SRAM; SRAM applications; Transition metal dichalcogenides; Transition metals | - |
dc.title | Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/ted.2015.2505064 | - |
dc.identifier.scopus | 2-s2.0-84958125898 | - |
dc.relation.pages | 625-630 | - |
dc.relation.journalvolume | 63 | - |
dc.relation.journalissue | 2 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.orcid | 0000-0002-6216-214X | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
顯示於: | 電機工程學系 |
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