Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET
Journal
IEEE Transactions on Electron Devices
Journal Volume
62
Pages
107-113
Date Issued
2015
Author(s)
M.-L. Fan
V. P.-H. Hu
Y.-N. Chen
C.-W. Hsu
Pin Su
C.-T. Chuang
M.-L. Fan
V. P.-H. Hu
Y.-N. Chen
C.-W. Hsu
Pin Su
C.-T. Chuang
Abstract
This paper investigates the impact of backgate biasing (V BS ) on the drain current (I D ) of ultrathin-body III-V heterojunction tunnel FET (HTFET). Compared with homojunction TFET and III-V/Ge MOSFET, this paper indicates that HTFET exhibits significantly higher I OFF (I D at VGS = 0 V and V DS = 0.5 V) modulation efficiency and the influence of V BS rapidly decreases with increasing V GS . In addition, it is observed that the change of source available states with V BS determines the I D modulation efficiency of p-type HTFET (pHTFET). Depending on the source doping concentration and operating VGS, the I D of HTFET under forward V BS can be anomalously smaller than that at V BS = 0 V. Furthermore, the impacts of source/drain doping concentrations and junction properties are discussed and shown to be critical in determining the I D modulation efficiency of HTFET. We find that, under controlled ambipolar current, reverse backgate biasing can be utilized to suppress the I OFF of HTFET, and the modulation efficiency increases with decreasing source doping concentration. Our study may provide insights for device/circuit designs with advanced TFET technologies.
Type
journal article