Low-Temperature (<40 �Xc) Atmospheric-Pressure Dielectric-Barrier-Discharge-Jet Treatment on Nickel Oxide for p-i-n Structure Perovskite Solar Cells
Journal
ACS Omega
Journal Volume
5
Journal Issue
11
Pages
6082-6089
Date Issued
2020
Author(s)
Abstract
A scan-mode low-temperature (<40 °C) atmospheric-pressure helium (He) dielectric-barrier discharge jet (DBDjet) is applied to treat nickel oxide (NiO) thin films for p-i-n perovskite solar cells (PSCs). Reactive plasma species help reduce the trap density, improve the transmittance and wettability, and deepen the valence band maximum (VBM) level. A NiO surface with the lower trap density surface of NiO allows better interfacial contact with the MAPbI3 layer and increases the carrier extraction capability. MAPbI3 can better crystallize on a more hydrophilic NiO surface, thereby suppressing charge recombination from the grain boundary and the interface. Further, the deeper VBM allows better band alignment and reduces the probability of nonradiative recombination. NiO treatment using He DBDjet with a scan rate of 0.3 cm/s can improve PSC efficiency from 13.63 to 14.88%. Copyright © 2020 American Chemical Society.
Type
journal article