Leakage current lowering and film densification of ZrO 2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment
Journal
Materials Science in Semiconductor Processing
Journal Volume
109
Date Issued
2020
Author(s)
Huang, K.-W.
Chang, T.-J.
Wang, C.-Y.
Yi, S.-H.
Wang, C.-I.
Jiang, Y.-S.
Yin, Y.-T.
Lin, H.-C.
Chen, M.-J.
SDGs
Type
journal article