Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe
Journal
IEEE Transactions on Electron Devices
Journal Volume
67
Journal Issue
4
Pages
1845-1851
Date Issued
2020
Author(s)
Lin, K.-W.
Abstract
The effect of selective-area oxide thickening in metal-insulator-semiconductor (MIS) tunnel structures on their current-voltage characteristics was investigated in this article. Under a low applied voltage ( 100× with respect to the device with thin-only oxide, and so was the photocurrent > 100× larger under an illuminance of 100 lx. With such an improved sensing performance, the ET MIS tunnel diode may find its use in low-cost sensor applications.
SDGs
Type
journal article