https://scholars.lib.ntu.edu.tw/handle/123456789/559060
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hardy, W.J. | en_US |
dc.contributor.author | Su, Y.-H. | en_US |
dc.contributor.author | Chuang, Y. | en_US |
dc.contributor.author | Maurer, L.N. | en_US |
dc.contributor.author | Brickson, M. | en_US |
dc.contributor.author | Baczewski, A. | en_US |
dc.contributor.author | JIUN-YUN LI | en_US |
dc.contributor.author | Lu, T.-M. | en_US |
dc.contributor.author | Luhman, D.R. | en_US |
dc.date.accessioned | 2021-05-05T02:56:59Z | - |
dc.date.available | 2021-05-05T02:56:59Z | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 19386737 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.url?eid=2-s2.0-85077205052&partnerID=40&md5=e8da95dbf1b2ff2ce664f9f21d2f1a94 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/559060 | - |
dc.description.abstract | In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration. ©The Electrochemical Society | - |
dc.relation.ispartof | ECS Transactions | - |
dc.subject.other | Metals; Nanocrystals; Nanoelectronics; Network architecture; Quantum optics; Qubits; Semiconducting germanium; Semiconductor quantum dots; Semiconductor quantum wells; Si-Ge alloys; Silicon; Charge sensing; Device geometries; Device performance; Gate-defined quantum dots; Ge/sige quantum wells; Iterative improvements; Rashba-type spin-orbit; Semiconductor heterostructure; Spin orbit coupling | - |
dc.title | Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits | en_US |
dc.type | conference paper | en |
dc.relation.conference | Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 - 236th ECS Meeting | - |
dc.identifier.doi | 10.1149/09201.0017ecst | - |
dc.identifier.scopus | 2-s2.0-85077205052 | - |
dc.relation.pages | 17 - 25 | - |
dc.relation.journalvolume | 92 | - |
dc.relation.journalissue | 1 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-4905-9954 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 電機工程學系 |
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