https://scholars.lib.ntu.edu.tw/handle/123456789/559255
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, C.-W. | en_US |
dc.contributor.author | Chen, Y.-C. | en_US |
dc.contributor.author | Lin, W.-J. | en_US |
dc.contributor.author | Tsai, J.-H. | en_US |
dc.contributor.author | TIAN-WEI HUANG | - |
dc.date.accessioned | 2021-05-05T03:27:04Z | - |
dc.date.available | 2021-05-05T03:27:04Z | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 0149645X | - |
dc.identifier.uri | https://www.scopus.com/inward/record.url?eid=2-s2.0-85094216077&partnerID=40&md5=41557f907e134712e7f7528d119302c2 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/559255 | - |
dc.description.abstract | This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc. © 2020 IEEE. | - |
dc.relation.ispartof | IEEE MTT-S International Microwave Symposium Digest | - |
dc.subject | 5G mobile communication; CMOS integrated circuits; Power amplifier; Transformer; Wideband | - |
dc.subject.other | 5G mobile communication systems; Bandwidth; CMOS integrated circuits; Millimeter waves; Power amplifiers; Linear operations; Millimeter wave (MMW); Mobile communications; Output matching network; Resonant capacitors; Saturated output power (Psat); Small signal gain; Wideband power amplifier; Broadband amplifiers | - |
dc.title | A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/IMS30576.2020.9223905 | - |
dc.identifier.scopus | 2-s2.0-85094216077 | - |
dc.relation.pages | 1323-1326 | - |
dc.relation.journalvolume | 2020-August | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
crisitem.author.dept | Communication Engineering | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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