|Title:||Accessing ratios of quantized resistances in graphene p - N junction devices using multiple terminals||Authors:||Patel D.
CHI-TE LIANG et al.
|Keywords:||Circuit simulation; Electric resistance measurement; Graphene; Quantum Hall effect; Semiconductor junctions; Circuit simulators; Graphene p-n junctions; Millimeter-scale; Multiple currents; Quantized Hall resistance; Ultraviolet lithography; Graphene devices||Issue Date:||2020||Journal Volume:||10||Journal Issue:||2||Source:||AIP Advances||Abstract:||
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ? 12 906 ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness. ? 2020 Author(s).
|Appears in Collections:||物理學系|
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