https://scholars.lib.ntu.edu.tw/handle/123456789/573419| Title: | Si Cryo-CMOS and quantum dots for quantum computing applications | Authors: | CHI-TE LIANG et al. JIUN-YUN LI et al. |
Keywords: | CMOS integrated circuits; Coulomb blockade; MOSFET devices; Nanocrystals; Quantum computers; Semiconductor quantum dots; Threshold voltage; VLSI circuits; Measurements of; nMOSFETs; Quantum Computing; Quantum oscillations; Subthreshold swing; Silicon | Issue Date: | 2021 | Source: | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | Abstract: | In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing subthreshold swing and an increasing threshold voltage as the temperature is reduced. Clear quantum oscillations of the QD conductance due to Coulomb blockade are demonstrated at 1.5 K. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108149692&doi=10.1109%2fVLSI-TSA51926.2021.9440109&partnerID=40&md5=6964a82130f10f92f501bd7be3a2f721 https://scholars.lib.ntu.edu.tw/handle/123456789/573419 |
DOI: | 10.1109/VLSI-TSA51926.2021.9440109 |
| Appears in Collections: | 物理學系 |
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