|Title:||Si Cryo-CMOS and quantum dots for quantum computing applications||Authors:||CHI-TE LIANG et al.
JIUN-YUN LI et al.
|Keywords:||CMOS integrated circuits; Coulomb blockade; MOSFET devices; Nanocrystals; Quantum computers; Semiconductor quantum dots; Threshold voltage; VLSI circuits; Measurements of; nMOSFETs; Quantum Computing; Quantum oscillations; Subthreshold swing; Silicon||Issue Date:||2021||Source:||VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings||Abstract:||
In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing subthreshold swing and an increasing threshold voltage as the temperature is reduced. Clear quantum oscillations of the QD conductance due to Coulomb blockade are demonstrated at 1.5 K. ? 2021 IEEE.
|Appears in Collections:||物理學系|
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