Si Cryo-CMOS and quantum dots for quantum computing applications
Journal
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Date Issued
2021
Author(s)
Wu, Yu-Jui
Chiang, Chih-Ying
Tsao, Hung-Yu
Lin, Min-Jui
Hsieh, Pu-Jia
Yeh, Ching-Chen
Syong, Wei-Ren
Hsu, Kai-Syang
Chen, Jeng-Chung
Abstract
In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing subthreshold swing and an increasing threshold voltage as the temperature is reduced. Clear quantum oscillations of the QD conductance due to Coulomb blockade are demonstrated at 1.5 K. ? 2021 IEEE.
Event(s)
2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Subjects
CMOS integrated circuits; Coulomb blockade; MOSFET devices; Nanocrystals; Quantum computers; Semiconductor quantum dots; Threshold voltage; VLSI circuits; Measurements of; nMOSFETs; Quantum Computing; Quantum oscillations; Subthreshold swing; Silicon
Type
conference paper