Topological Transition in a 3 nm Thick Al Film Grown by Molecular Beam Epitaxy
Journal
Journal of Nanomaterials
Journal Volume
2019
Pages
-
Date Issued
2019
Author(s)
Kumar, A.
Su, G.-M.
Chang, C.-S.
Yeh, C.-C.
Wu, B.-Y.
Patel, D.K.
Fan, Y.-T.
Lin, S.-D.
Chow, L.
Abstract
We have performed detailed transport measurements on a 3 nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (~2.4 K) compared to that of bulk Al (1.2 K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology.
SDGs
Type
journal article