https://scholars.lib.ntu.edu.tw/handle/123456789/573717
標題: | Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap | 作者: | Ju-Hung Chen Sheng-Kuei Chiu Jin-De Luo Shu-Yu Huang Hsiang-An Ting Mario Hofmann Ya-Ping Hsieh Chu-Chi Ting Mario Hofmann |
公開日期: | 2020 | 卷: | 10 | 期: | 1 | 來源出版物: | Scientific Reports | 摘要: | Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500?nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8?eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively). ? 2020, The Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090504774&doi=10.1038%2fs41598-020-70879-1&partnerID=40&md5=d32799b09b933547037f020b3f74d89d https://scholars.lib.ntu.edu.tw/handle/123456789/573717 |
ISSN: | 20452322 | DOI: | 10.1038/s41598-020-70879-1 |
顯示於: | 物理學系 |
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