https://scholars.lib.ntu.edu.tw/handle/123456789/573719
標題: | Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities | 作者: | Szu-Hua Chen Yen Nguyen Ting-Wei Chen Zhi-Long Yen Mario Hofmann Ya-Ping Hsieh Mario Hofmann |
關鍵字: | Carrier concentration; Carrier mobility; Degrees of freedom (mechanics); Graphene; Graphene devices; Impurities; Achievable performance; Carrier conduction; Carrier scattering; Charge heterogeneity; Charged impurity scatterings; Mobility variation; Optical fingerprints; Universal mechanisms; Carrier transport | 公開日期: | 2020 | 卷: | 165 | 起(迄)頁: | 163-168 | 來源出版物: | Carbon | 摘要: | The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of interaction between ionic adsorbates and carriers in 2D materials. We here observe a previously unknown source of carrier scattering in graphene upon interaction with ionic impurities. Different from charged impurity scattering, these “neutral scatterers” do not depend on carrier concentration and yield a sixfold mobility variation at similar doping. Comparison of different ionic residue from various metal etchants reveals a universal mechanism that controls the carrier mean free path. Raman spectroscopy suggests that inhomogeneous charge distribution is the source of neutral scatterers and we extract an optical fingerprint for their presence. The charge heterogeneity thus acts as an additional degree of freedom in graphene's carrier transport and its consideration can explain the transition from ambipolar to unipolar charge transport in graphene. Our results not only provide new insight into the carrier transport of 2D materials in the presence of disorder and provide guidelines for enhancing the performance of graphene devices but also enable novel device concepts in graphene. ? 2020 |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084036297&doi=10.1016%2fj.carbon.2020.04.036&partnerID=40&md5=e256bba6ea79e226f925147904e36b95 https://scholars.lib.ntu.edu.tw/handle/123456789/573719 |
ISSN: | 86223 | DOI: | 10.1016/j.carbon.2020.04.036 |
顯示於: | 物理學系 |
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