https://scholars.lib.ntu.edu.tw/handle/123456789/573732
標題: | A Bi-Anti-Ambipolar Field Effect Transistor | 作者: | Paul Inbaraj C.R., Mathew R.J., Ulaganathan R.K., Sankar R., Kataria M., Lin H.Y., Chen Y.-T., Hofmann M., Lee C.-H., Chen Y.-F. Mathew R.J Ulaganathan R.K Sankar R Kataria M Lin H.Y Lee C.-H Mario Hofmann YIT-TSONG CHEN Paul Inbaraj C.R |
關鍵字: | Heterojunctions; Microelectronics; Ambipolar field; Ambipolar transistors; Carrier conduction; Dynamic deformation; Integration density; Optical characterization; Recombination rate; Tunable emissions; Field effect transistors | 公開日期: | 2021 | 卷: | 15 | 期: | 5 | 起(迄)頁: | 8686-8693 | 來源出版物: | ACS Nano | 摘要: | Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications. ? |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106358260&doi=10.1021%2facsnano.1c00762&partnerID=40&md5=32fffe0917f3db88e8222bc507cb7d5d https://scholars.lib.ntu.edu.tw/handle/123456789/573732 |
ISSN: | 19360851 | DOI: | 10.1021/acsnano.1c00762 | SDG/關鍵字: | Heterojunctions; Microelectronics; Ambipolar field; Ambipolar transistors; Carrier conduction; Dynamic deformation; Integration density; Optical characterization; Recombination rate; Tunable emissions; Field effect transistors |
顯示於: | 物理學系 |
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