A Bi-Anti-Ambipolar Field Effect Transistor
Journal
ACS Nano
Journal Volume
15
Journal Issue
5
Pages
8686-8693
Date Issued
2021
Author(s)
Paul Inbaraj C.R., Mathew R.J., Ulaganathan R.K., Sankar R., Kataria M., Lin H.Y., Chen Y.-T., Hofmann M., Lee C.-H., Chen Y.-F.
Mathew R.J
Ulaganathan R.K
Sankar R
Kataria M
Lin H.Y
Lee C.-H
Paul Inbaraj C.R
Abstract
Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications. ?
Subjects
Heterojunctions; Microelectronics; Ambipolar field; Ambipolar transistors; Carrier conduction; Dynamic deformation; Integration density; Optical characterization; Recombination rate; Tunable emissions; Field effect transistors
Other Subjects
Heterojunctions; Microelectronics; Ambipolar field; Ambipolar transistors; Carrier conduction; Dynamic deformation; Integration density; Optical characterization; Recombination rate; Tunable emissions; Field effect transistors
Type
journal article