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  4. 2D Material Enabled Offset-Patterning with Atomic Resolution
 
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2D Material Enabled Offset-Patterning with Atomic Resolution

Journal
Advanced Functional Materials
Journal Volume
30
Journal Issue
40
Date Issued
2020
Author(s)
Szu-Hua Chen
Mario Hofmann
Zhi-Long Yen
Ya-Ping Hsieh
Mario Hofmann  
DOI
10.1002/adfm.202004370
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089143208&doi=10.1002%2fadfm.202004370&partnerID=40&md5=022237b254e73aa032c3cd8e54e6d6db
https://scholars.lib.ntu.edu.tw/handle/123456789/573734
Abstract
Atomic-precision patterning at large scale is a central requirement for nanotechnology and future electronics that is hindered by the limitations of lithographical techniques. Historically, imperfections of the fabrication tools have been compensated by multi-patterning using sequential lithography processes. The realization of nanometer-scale features from much larger patterns through offset stacking of atomically thin masks is demonstrated. A unique mutual stabilization effect between two graphene layers produces atomically abrupt transitions that selectively expose single-layer covered regions. Bilayer regions, on the other hand, protect the underlying substrate from removal for several hours permitting transfer of atomic thickness variations into lateral features in various semiconductors. Nanoscopic offsets between two 2D materials layers could be introduced through bottom-up and top-down approaches, opening up new routes for high-resolution patterning. A self-aligned templating approach yields nanometer-wide bilayer graphene nanoribbons with macroscopic length that produces high-aspect-ratio silicon nanowalls. Moreover, offset-transfer of lithographically patterned graphene layers enables multipatterning of large arrays of semiconductor features whose resolution is not limited by the employed lithography and could reach <10?nm feature size. The results open up a new route to combining design flexibility with unprecedented resolution at large scale. ? 2020 Wiley-VCH GmbH
Subjects
Aspect ratio; Atoms; Graphene; Graphene nanoribbon; Lithography; Nanoribbons; Bilayer graphene nanoribbons; Bottom-up and top-down; Design flexibility; High-resolution patterning; Macroscopic length; Sequential lithography; Stabilization effects; Thickness variation; Substrates
Type
journal article

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