Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability
Journal
IEEE International Reliability Physics Symposium Proceedings
Journal Volume
2019-March
Pages
-
Date Issued
2019
Author(s)
Abstract
Oxide defects in HfO2 and Y2O3 on GaAs(001) are characterized by analyzing capacitance-voltage (C-V) hysteresis of metal-oxide-semiconductor capacitor (MOSCAP) under positive and negative stress fields. The C-Vs of Y2O3/GaAs have smaller hysteresis and flat-band voltage shift in both accumulation and depletion regimes. This indicates less shallow and deep traps for Y2O3, making this high-k oxide more suitable than HfO2 for GaAs passivation in terms of reliability. © 2019 IEEE.
Subjects
BTI
C-V hysteresis
GaAs
HIO2
MOS
Reliability
Y203
Type
conference paper