Sn-Doping Enhanced Ultrahigh Mobility In1- xSnxSe Phototransistor
Journal
ACS Applied Materials and Interfaces
Journal Volume
11
Journal Issue
27
Pages
24269-24278
Date Issued
2019
Author(s)
Paul Inbaraj, C.R. et al.
Gudelli, V.K.
Mathew, R.J.
Ulaganathan, R.K.
Sankar, R.
Lin, H.Y.
Lin, H.-I.
Liao, Y.-M.
Cheng, H.-Y.
Lin, K.-H.
Lee, C.-H.
Abstract
Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.
Type
journal article