https://scholars.lib.ntu.edu.tw/handle/123456789/576188
標題: | Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation | 作者: | Lee C.-C Hsieh C.-P Huang P.-C Liao M.-H. MING-HAN LIAO |
關鍵字: | FinFET; Finite element method; Device performance; Finite element simulations; Performance characteristics; Performance variations; Process-oriented simulations; Self-heating effect; Stress amplitudes; Stress contribution; Lattice mismatch | 公開日期: | 2021 | 卷: | 14 | 期: | 3 | 來源出版物: | Applied Physics Express | 摘要: | Stress-induced mechanism and related manifold characteristics from lattice mismatch and harsh self-heating effect (SHE) substantially interact are major concerns of advanced strained Ge p-FinFETs with inherent poor thermal conductivity. This study presents a process-oriented simulation methodology to investigate the comprehensive influences composed of the stress amplitude and performance variations induced by SHE and lattice stresses. Device performance can be separately improving by 15.98% and 31.20% when lattice strain and subsequent SHE are introduced. In conclusion, the effect of SHE on the performance of advanced p-FinFET is explored and found tantamount to the stress contribution of the lattice mismatch. ? 2021 The Japan Society of Applied Physics |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102599822&doi=10.35848%2f1882-0786%2fabe602&partnerID=40&md5=1222e66fabc6613c6e8175a8877a2d6c https://scholars.lib.ntu.edu.tw/handle/123456789/576188 |
ISSN: | 1882-0778 | DOI: | 10.35848/1882-0786/abe602 |
顯示於: | 機械工程學系 |
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