Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation
Journal
Applied Physics Express
Journal Volume
14
Journal Issue
3
Date Issued
2021
Author(s)
Abstract
Stress-induced mechanism and related manifold characteristics from lattice mismatch and harsh self-heating effect (SHE) substantially interact are major concerns of advanced strained Ge p-FinFETs with inherent poor thermal conductivity. This study presents a process-oriented simulation methodology to investigate the comprehensive influences composed of the stress amplitude and performance variations induced by SHE and lattice stresses. Device performance can be separately improving by 15.98% and 31.20% when lattice strain and subsequent SHE are introduced. In conclusion, the effect of SHE on the performance of advanced p-FinFET is explored and found tantamount to the stress contribution of the lattice mismatch. ? 2021 The Japan Society of Applied Physics
Subjects
FinFET; Finite element method; Device performance; Finite element simulations; Performance characteristics; Performance variations; Process-oriented simulations; Self-heating effect; Stress amplitudes; Stress contribution; Lattice mismatch
SDGs
Type
journal article