https://scholars.lib.ntu.edu.tw/handle/123456789/576864
標題: | Huge magnetoresistance in topological insulator spin-valves at room temperature | 作者: | Tseng P Chen J.-W Hsueh W.-J. WEN-JENG HSUEH |
公開日期: | 2021 | 卷: | 11 | 期: | 1 | 來源出版物: | Scientific Reports | 摘要: | Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices. ? 2021, The Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107117013&doi=10.1038%2fs41598-021-91242-y&partnerID=40&md5=30fb00c0c06b88aa92425d913aaa7648 https://scholars.lib.ntu.edu.tw/handle/123456789/576864 |
ISSN: | 20452322 | DOI: | 10.1038/s41598-021-91242-y |
顯示於: | 工程科學及海洋工程學系 |
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