Challenges toward Low-Power SOT-MRAM
Journal
IEEE International Reliability Physics Symposium Proceedings
Journal Volume
2021-March
Date Issued
2021
Author(s)
Lin S.-J
Abstract
Spin-orbit-torque magnetic random-access memory (SOT-MRAM) equipped with sub-I-V switching voltage [1, 2] is considered to be one of the promising candidates for next-generation low-power, high speed and non-volatile embedded cache memory applications. To fulfill these performance requirements, however, there are many technical bottlenecks to be conquered, such as SOT efficiency and scalability. This paper presents the recent progress on SOT-MRAM exploration of CMOS compatible high spin-Hall conductivity materials and structures. ? 2021 IEEE.
Subjects
Cache memory; Magnetic recording; MRAM devices; Random access storage; Spin orbit coupling; CMOS Compatible; Embedded Caches; Magnetic random access memory; Memory applications; Non-volatile; Performance requirements; Recent progress; Switching voltages; Magnetic storage
SDGs
Type
conference paper