https://scholars.lib.ntu.edu.tw/handle/123456789/576934
標題: | Sub-7-nm textured ZrO2 with giant ferroelectricity | 作者: | Huang K.-W Yi S.-H Jiang Y.-S Kao W.-C Yin Y.-T Beck D Korolkov V Proksch R Shieh J MIIN-JANG CHEN |
關鍵字: | Atomic layer deposition; Crystal orientation; Electrodes; Ferroelectric films; Ferroelectric thin films; Ferroelectricity; Fluorspar; Nanotechnology; Perovskite; Piezoelectricity; Platinum; Polarization; Praseodymium; Processing; Scanning probe microscopy; Temperature; Textures; Ultrathin films; Zirconia; Frequency dependent; Low temperature preparation; Piezoelectric coefficient; Piezoresponse force microscopy; Plasma-enhanced atomic layer deposition; Polarization measurements; Preferred orientations; Processing temperature; Film preparation | 公開日期: | 2021 | 卷: | 205 | 來源出版物: | Acta Materialia | 摘要: | An ~6.5 nm pure ZrO2 thin film with a giant ferroelectric remanent polarization (Pr) of ~50 μCcm?2 and an effective piezoelectric coefficient (d33) of 7?9 pm/V is reported. The film was prepared on a (111)-oriented Pt electrode using plasma-enhanced atomic layer deposition at 300 °C, followed by annealing at 400 °C, and exhibited a preferred orientation of the orthorhombic (111) planes in the in-plane direction. The Pr value of ~50 μCcm?2 is the largest reported to date for both perovskite and fluorite nanoscale ferroelectric thin films (< 120 nm) on a Pt electrode. Furthermore, the processing temperature of 300?400 °C is the lowest reported to date to produce a Pr of ~50 μCcm?2 in nanoscale ferroelectrics on a Pt electrode. The giant Pr, ascribed to the preferred crystal orientation, was confirmed by the positive-up negative-down (PUND) polarization measurement with a long delay time to allow the relaxation of polarization. The effective d33 was obtained using piezoresponse force microscopy with an interferometric displacement sensor to minimize the frequency-dependent artifacts and the effects of cantilever dynamics. The low-temperature preparation of the textured ZrO2 ultrathin film with a giant Pr is extremely advantageous for device scaling and process integration in advanced nanoelectronics. ? 2020 |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098460023&doi=10.1016%2fj.actamat.2020.116536&partnerID=40&md5=7f1e033e4ee3c6598998cd5527872eec https://scholars.lib.ntu.edu.tw/handle/123456789/576934 |
ISSN: | 13596454 | DOI: | 10.1016/j.actamat.2020.116536 |
顯示於: | 材料科學與工程學系 |
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