850/940-nm VCSEL for optical communication and 3D sensing
Journal
Opto-Electronic Advances
Journal Volume
1
Journal Issue
3
Pages
1-11
Date Issued
2018
Author(s)
Cheng, Chih-Hsien
Shen, Chih-Chiang
Kao, Hsuan-Yun
Hsieh, Dan-Hua
Wang, Huai-Yung
Yeh, Yen-Wei
Lu, Yun-Ting
Chen, Sung-Wen Huang
Tsai, Cheng-Ting
Chi, Yu-Chieh
Kao, Tsung Sheng
Kuo, Hao-Chung
Lee, Po-Tsung
Abstract
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed. ? 2018 Institute of Optics and Electronics, Chinese Academy of Sciences. All rights reserved.
SDGs
Type
review