https://scholars.lib.ntu.edu.tw/handle/123456789/580558
標題: | A NRZ-OOK modulated 850-nm VCSEL with 54 Gb/s error-free data transmission | 作者: | Huang T.-Y Qiu J Wu C.-H Cheng H.-T Feng M Kuo H.-C CHAO-HSIN WU |
關鍵字: | Amplitude shift keying; Capacitance; Data transfer; Gallium alloys; Gallium compounds; Indium alloys; Passivation; Quantum well lasers; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Semiconductor quantum wells; Transceivers; Transmissions; InGaAs quantum wells; Microwave characteristics; Modulation bandwidth; Non-return to zeros; On-off keying modulations; Parasitic capacitance; Passivation layer; Threshold currents; Surface emitting lasers | 公開日期: | 2019 | 卷: | Part F140-CLEO_Europe 2019 | 來源出版物: | Optics InfoBase Conference Papers | 摘要: | 850 nm vertical-cavity surface-emitting lasers (VCSELs), the standard light sources in transmitters for short-range data centre interconnects, have been devoted to improving their high-speed characteristics to meet the rapidly growing data traffic demand. The high-speed characteristics have been investigated by the incorporation of InGaAs quantum wells (QWs) design to increase the modulation bandwidth[1], oxide-confined aperture to reduce threshold current[2], and benzocyclobutene (BCB) passivation layer to reduce parasitic capacitance[3]. In this report, we demonstrate the microwave characteristics of an 850 nm oxide-confined InGaAs quantum well (QW) VCSEL with an oxide aperture diameter and threshold current of 4.23-μm and 0.35 mA, which achieves the non-return-to-zero (NRZ) ON-OFF keying (OOK) modulation is performed with 54 Gb/s back-to-back error-free data transmission. ? 2019 IEEE |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084565975&partnerID=40&md5=fdd9456f89d5031d2d52f18c31af3ec7 https://scholars.lib.ntu.edu.tw/handle/123456789/580558 |
顯示於: | 電機工程學系 |
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