A NRZ-OOK modulated 850-nm VCSEL with 54 Gb/s error-free data transmission
Journal
Optics InfoBase Conference Papers
Journal Volume
Part F140-CLEO_Europe 2019
Date Issued
2019
Author(s)
Abstract
850 nm vertical-cavity surface-emitting lasers (VCSELs), the standard light sources in transmitters for short-range data centre interconnects, have been devoted to improving their high-speed characteristics to meet the rapidly growing data traffic demand. The high-speed characteristics have been investigated by the incorporation of InGaAs quantum wells (QWs) design to increase the modulation bandwidth[1], oxide-confined aperture to reduce threshold current[2], and benzocyclobutene (BCB) passivation layer to reduce parasitic capacitance[3]. In this report, we demonstrate the microwave characteristics of an 850 nm oxide-confined InGaAs quantum well (QW) VCSEL with an oxide aperture diameter and threshold current of 4.23-μm and 0.35 mA, which achieves the non-return-to-zero (NRZ) ON-OFF keying (OOK) modulation is performed with 54 Gb/s back-to-back error-free data transmission. ? 2019 IEEE
Subjects
Amplitude shift keying; Capacitance; Data transfer; Gallium alloys; Gallium compounds; Indium alloys; Passivation; Quantum well lasers; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Semiconductor quantum wells; Transceivers; Transmissions; InGaAs quantum wells; Microwave characteristics; Modulation bandwidth; Non-return to zeros; On-off keying modulations; Parasitic capacitance; Passivation layer; Threshold currents; Surface emitting lasers
Type
conference paper