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  4. Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications
 
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Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications

Journal
Scientific Reports
Journal Volume
10
Journal Issue
1
Date Issued
2020
Author(s)
Zhang Y.-W
Wu B.-Y
Chen K.-C
Wu C.-H
Lin S.-Y.
CHAO-HSIN WU  
DOI
10.1038/s41598-020-71520-x
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090089068&doi=10.1038%2fs41598-020-71520-x&partnerID=40&md5=55601448e65f50903b36008fd85090e7
https://scholars.lib.ntu.edu.tw/handle/123456789/580569
Abstract
Thin gold (Au) films (10?nm) are deposited on different substrates by using a e-beam deposition system. Compared with sapphire and SiO2 surfaces, longer migration length of the Au adatoms is observed on MoS2 surfaces, which helps in the formation of a single-crystal Au film on the MoS2 surface at 200?°C. The results have demonstrated that with the assistance of van der Waals epitaxy growth mode, single-crystal 3D metals can be grown on 2D material surfaces. With the improved crystalline quality and less significant Au grain coalescence on MoS2 surfaces, sheet resistance 2.9 Ω/sq is obtained for the thin 10?nm Au film at 100?°C, which is the lowest value reported in literature. The highly conductive thin metal film is advantageous for the application of backend interconnects for the electronic devices with reduced line widths. ? 2020, The Author(s).
Type
journal article

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