Investigation on Diffferent Buffer to Supress the RF-Loss in AlGaN/GaN-on-Si HEMTs
Journal
2019 IEEE 4th International Future Energy Electronics Conference, IFEEC 2019
Date Issued
2019
Author(s)
Abstract
An research on High Electron Mobility Transistors (HEMTs) fabricate on different type buffer layers including AlxGa1-xN stacked buffer and AlGaN/GaN superlattice buffer has been carefully studied. The research including structure analysis via transmission electron microscope (TEM), material investigation via X-ray diffractometer (XRD) and Raman spectrum, the defect quantification by atomic force microscope (AFM) and etch pit density (EPD) test, DC characteristics measurement and RF characteristics measurement. We provide lots of evidence to ensure the better buffer layer type which may attribute to better electrical characteristics for less defect such as dislocation and interface stress. ? 2019 IEEE.
Subjects
Aluminum alloys; Aluminum gallium nitride; Buffer layers; Crystal atomic structure; Defects; Gallium alloys; Gallium nitride; III-V semiconductors; Lattice mismatch; Semiconductor alloys; Transmission electron microscopy; DC characteristics; Electrical characteristic; Etch pit density; Gan on si; High electron mobility transistor (HEMTs); RF characteristics; Structure analysis; X ray diffractometers; High electron mobility transistors
SDGs
Type
conference paper